triquint semiconductor texas : (972)994 8465 fax (972)994 8504 web: www.triquint.com advance product information 1 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and process specifications. specifications are subject to change without notice. catv ultra-linear power amp TGA2801D-EPU-SG key features and performance ? high power compression (p1db 31.5 dbm typ.) ? low cost surface mount package ? flat gain ? ultra-low distortion (55dbm ip3 typ.) ? wide bandwidth (40mhz - 1ghz) ? low dc power consumption ? single supply bias (+12v) ? unconditionally stable ? proven gaas technology description the triquint tga2801d-epu is an ultra-linear, packaged power amplifier which operates from 40mhz to 1000mhz. the amplifier available in a standard 16 lead soic package. the amplifier provides a flat gain along with ultra-low distortion. it also provides a high output power with a low dc power consumption. this amplifier is ideally suited for use in catv distribution systems or other applications requiring high output powers and extremely low distortion. demonstration boards are available. november 2, 2004 bottom view top view tga2801d compression 13.5 db tilt to 870 mhz: 110 ch, no qam, 550ma -90 -80 -70 -60 -50 -40 46 48 50 52 54 56 58 60 62 64 equiv output @ 870 mhz, (dbmv/ch) distortion (dbc) xmod ctb tga2801d compression 13.5 db tilt to 870 mhz: 79 ch, qam to 870 mhz with 6 db offset, 550ma -90 -80 -70 -60 -50 -40 46 48 50 52 54 56 58 60 62 64 equiv output @ 870 mhz, (dbmv/ch) distortion (dbc) xmod ctb gain in a typical circuit w/external balun effects removed 9 10 11 12 13 14 0 200 400 600 800 1000 frequency (mhz) s21 (db) primary applications ? hfc nodes ? catv line amplifiers ? head end equipment
triquint semiconductor texas : (972)994 8465 fax (972)994 8504 web: www.triquint.com advance product information 2 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and process specifications. specifications are subject to change without notice. TGA2801D-EPU-SG dc specifications symbol parameter typ unit v dd bias supply voltage 12 v i dd bias supply current 485 ma v g1 gate 1 voltage (pin 7) 0.68 v v g2 gate 2 voltage (pin 2) 4.15 v v out1 rf output 1 voltage (pin 14) v dd v v out2 rf output 2 voltage (pin 11) v dd v maximum ratings 1 / symbol parameter min max units notes v dd bias supply voltage 0 15 v i dd bias supply current 615 ma 2 / p in rf input power 70 dbmv t assy assembly temperature (30 seconds max) 300 c t stg storage temperature -65 150 c t case package operating temperature (heat slug) -40 100 c 1 / these values reflect maximum operable values for this device. operating above the recommended values may directly affect mttf. 2 / total current
triquint semiconductor texas : (972)994 8465 fax (972)994 8504 web: www.triquint.com advance product information 3 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and process specifications. specifications are subject to change without notice. rf specifications t a =25 c, v dd =12v symbol parameter min typ max units bw bandwidth 40 870 mhz s 21 gain 1 / 12.0 db gf gain flatness 1 / 0.3 db nf noise figure 2.75 db p 1db 1db gain compression @ 1ghz 31.5 dbm ip 3 two-tone, third-order intercept (625 & 700mhz) 55 dbm ctb composite triple beat distortion 2 / -80 dbc cso composite second order distortion 2 / -72 dbc xmod cross modulation 2 / -73 dbc irl input return loss 1 / 3 / 22 db orl output return loss 1 / 3 / 22 db i d drain current 4 / 485 550 ma 1 / measured performance of chip alone. balun effects have been removed. 2 / 112-channel flat, +44dbmv/channel output 3 / using application circuit on last page 4 / increasing drain current will improve linearity of device TGA2801D-EPU-SG
triquint semiconductor texas : (972)994 8465 fax (972)994 8504 web: www.triquint.com advance product information 4 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and process specifications. specifications are subject to change without notice. typical measured s-parameters using application circuit (includes effects of external baluns) TGA2801D-EPU-SG -25 -20 -15 -10 -5 0 0 200 400 600 800 1000 frequency (mhz) s12 (db) 9 10 11 12 13 14 0 200 400 600 800 1000 frequency (mhz) s21 (db)
triquint semiconductor texas : (972)994 8465 fax (972)994 8504 web: www.triquint.com advance product information 5 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and process specifications. specifications are subject to change without notice. typical measured s-parameters using application circuit (includes effects of external baluns) TGA2801D-EPU-SG -50 -40 -30 -20 -10 0 0 200 400 600 800 1000 frequency (mhz) s11 (db) -50 -40 -30 -20 -10 0 0 200 400 600 800 1000 frequency (mhz) s22 (db)
triquint semiconductor texas : (972)994 8465 fax (972)994 8504 web: www.triquint.com advance product information 6 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and process specifications. specifications are subject to change without notice. TGA2801D-EPU-SG typical measured performance using application circuit (includes effects of external baluns) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 100 200 300 400 500 600 700 800 900 1000 frequency (mhz) nf (db)
triquint semiconductor texas : (972)994 8465 fax (972)994 8504 web: www.triquint.com advance product information 7 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and process specifications. specifications are subject to change without notice. lci pa - 2001 1 16 15 14 13 11 10 9 8 7 6 5 4 3 2 12 0.296 0.406 heat slug 0.234 0.184 0.087 0.056 0.050 0.016 0.407 0.002 0.094 mechanical specifications tga2801d-epu TGA2801D-EPU-SG
triquint semiconductor texas : (972)994 8465 fax (972)994 8504 web: www.triquint.com advance product information 8 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and process specifications. specifications are subject to change without notice. lci pa - 2001 1 16 15 14 13 11 10 9 8 7 6 5 4 3 2 12 0.296 0.406 tga2801d-epu pinout pin description pin description 1 gnd 2 gate 2: open circuit on pc board 3 rf input 1 4 gnd 5 gnd 6 rf input 2 7 gate 1: current adjust r 1 = open circuit 8 gnd 9 gnd 10 v dd 11 rf output 2 12 gnd 13 gnd 14 rf output 1 15 v dd 16 gnd TGA2801D-EPU-SG
triquint semiconductor texas : (972)994 8465 fax (972)994 8504 web: www.triquint.com advance product information 9 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and process specifications. specifications are subject to change without notice. component description ref description c1 0.01 m f capacitor c2 0.01 m f capacitor c3 300pf capacitor c4 300pf capacitor c5 - c8 1.0pf - 2.0pf capacitor 3 / l1 390nh inductor l2 390nh inductor r1 current adjust 2 / r 1 = open circuit t1 balun 1 / t2 balun 1 / 1 / balun performance impacts amplifier return losses and gain. best performance can be achieved by winding 34 or 36 gauge bifilar wire around a small binocular core made from low-loss magnetic material. suitable wire may be obtained from mws wire industries. core vendors include ferronics, fairrite, tdk, and micrometals. alternatively, off-the-shelf baluns can be purchased from a number of vendors including mini-circuits (adtl1-18-75), m/a-com (etc1-1-13), and pulse engineering (cx2071). 2 / curre nt can be adjusted by either changing the resistor value or forcing a voltage on pin 7. 3 / tunes out balun inductance. selected for best return loss. TGA2801D-EPU-SG recommended assembly rf in n/c lci pa - 2001 1 16 15 14 13 11 10 9 8 7 6 5 4 3 2 12 +12 vdc +12 vdc rf out t1 r1 l2 l1 c4 c3 c2 c1 t2 c6 c5 c8 c7 tga2801d
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